【作者单位】a Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260, United States; b Department of Chemistry, Taiyuan Normal University, Taiyuan, 030619, China; c Department of Physics, Southern University of Science & Technology, Shenzhen, 518055, China; d MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University, Xi'an, 710049, China; e Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, NY 14260, United States; f Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, NY 14260, United States; g Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545, United States; h State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China; i Department of Physics, Applied Physics & Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, United States
【年份】2020
【卷号】Vol.68
【ISSN】2211-2855
【关键词】Absorption coefficient Carrier mobility Chalcogenide perovskite Defects Hall effect
【摘要】 BaZrS 3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7–1.8 eV, a very strong light-matter interaction, and a h...
