【刊名】Rengong Jingti Xuebao/Journal of Synthetic Crystals
【作者单位】aDepartment of Physics, Taiyuan Normal University, Jinzhong, 030600, China;bState Key Laboratory of Widegap Semiconductor Optoelectronic Materials and Technologies, North University of China, Taiyuan, 030051, China;cSchool of Microelectronics, Xidian University, Xi’an, 710071, China
【年份】2025
【卷号】Vol.54 No.2
【页码】348-357
【ISSN】1000-985X
【关键词】breakdown voltage composite terminal reverse leakage current Schottky diode β-GaO
【摘要】 As a new generation of wide bandgap semiconductor, gallium oxide has a larger bandgap width and higher breakdown field strength , making it an ideal material for fabricating high voltage, high frequency, and high power electronic devices. However, du...
